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HiPerFET TM
Power MOSFETs
Q-Class
Single MOSFET Die
N-Channel Enhancement Mode
IXFN 21N100Q
V DSS = 1000 V
I D25 = 21 A
R DS(on) = 0.50 ?
t rr ≤ 250 ns
Avalanche Rated, Low Q g , High dv/dt
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
Test Conditions
Maximum Ratings
S
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
1000
1000
± 20
± 30
V
V
V
V
G
D
S
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
21
84
A
A
G = Gate
S = Source
D = Drain
I AR
E AR
E AS
dv/dt
P D
T J
T JM
T stg
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
21
60
2.5
10
520
-55 to +150
150
-55 to +150
A
mJ
J
V/ns
W
° C
° C
° C
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
? IXYS advanced low Q g process
? Low gate charge and capacitances
- easier to drive
-faster switching
? Unclamped Inductive Switching (UIS)
rated
? Low R DS (on)
? Fast intrinsic diode
V ISOL
M d
50/60 Hz, RMS
I ISOL ≤ 1 mA
Mounting torque
t = 1 min
t=1s
2500
3000
1.5/13
V~
V~
Nm/lb.in.
? International standard package
? miniBLOC with Aluminium nitride
isolation for low thermal resistance
Weight
Terminal connection torque
1.5/13
30
Nm/lb.in.
g
? Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
? Molding epoxies meet UL 94 V-0
flammability classification
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? DC-DC converters
? Battery chargers
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
1000
3
T J = 125 ° C
5.0
± 100
100
2
V
V
nA
μ A
mA
? Switched-mode and resonant-mode
power supplies
? DC choppers
? Temperature and lighting controls
Advantages
? Easy to mount
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.50
?
? Space savings
? High power density
? 2003 IXYS All rights reserved
DS98762B(01/03
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